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| HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE(sat) tfi(typ) 160 ns 115 ns IXGR 35N120B 1200 V 70 A 3.3 V IXGR 35N120C 1200 V 70 A 4.0 V (Electrically Isolated Backside) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load TC = 25C Maximum Ratings 1200 1200 20 30 70 35 140 ICM = 90 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 5 V V V V A A A A W C C C C g ISOPLUS 247 E153432 G C E Isolated Backside* C = Collector G = Gate, E = Emitter * Patent pending Features l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight DCB Isolated mounting tab Meets TO-247AD package Outline l High current handling capability l MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 1200 2.5 5.0 250 5 100 35N120B TJ = 125C l l BVCES VGE(th) ICES IGES VCE(sat) IC IC = 1 mA, VGE = 0 V = 750 A, VCE = VGE TJ = 125C V V A mA nA V V V V Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies l AC motor speed control l DC servo and robot drives l DC choppers Advantages l l VCE = VCES VGE = 0 V; note 1 VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V 3.3 2.7 4.0 3.4 Easy assembly High power density 35N120C TJ = 125C (c) 2001 IXYS All rights reserved 98818 (04/01) IXGR 35N120B IXGR 35N120C Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 4620 VCE = 25 V, VGE = 0 V, f = 1 MHz 260 90 170 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 35N120B 35N120C 35N120B 35N120C 35N120B 35N120C td(on) tri Eon td(off) tfi Eoff RthJC RthCK 0.15 Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 35N120B Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, 35N120C higher TJ or increased RG 35N120B 35N120C 35N120B 35N120C 28 57 50 27 180 150 160 115 3.8 3.0 55 31 2.6 300 220 360 260 8.0 6.2 280 220 320 190 7.3 4.2 S pF pF pF nC nC nC ns ns ns ns ns ns mJ mJ ns ns mJ ns ns ns ns mJ mJ 0.5 K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 ISOPLUS 247 OUTLINE gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff IC = IC90, VCE = 10 V, Note1 Note: 1. Pulse test, tp 300 ms, duty cycle:d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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